- 您现在的位置：买卖IC网 > Sheet目录518 > SQ4936EY-T1-GE3 (Vishay Siliconix)MOSFET DUAL N-CH 30V 7A 8SOIC
SQ4936EY
www.vishay.com
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
10
2.5
8
6
I D = 5.8 A
V D S = 15 V
2.1
1.7
I D = 5.8 A
V GS = 10 V
4
2
0
1.3
0.9
0.5
0
3
6
9
12
15
- 50 - 25
0
25
50
75
100
125
150
175
100
10
1
Q g - Total G ate Charge (nC)
Gate Charge
T J = 150 ° C
0.25
0.20
0.15
T J - Junction Temperature ( ° C)
On-Resistance vs. Junction Temperature
0.1
0.01
T J = 25 ° C
0.10
0.05
T J = 125 ° C
T J = 25 ° C
0.001
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
0.6
0.3
0
- 0.3
- 0.6
- 0.9
- 1.2
V S D - S ource-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
I D = 5 mA
I D = 250 μA
45
40
35
30
V GS - G ate-to- S ource Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
I D = 1 mA
- 50 - 25
0
25
50
75
100
125
150
175
- 50 - 25
0
25
50
75
100
125
150
175
T J - Temperature ( ° C)
Threshold Voltage
T J - Junction Temperature ( ° C)
Drain Source Breakdown vs. Junction Temperature
S11-2113-Rev. B, 07-Nov-11
4
Document Number: 68868
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SQ4942EY-T1-GE3
MOSFET DUAL N-CH 40V 8SOIC
SQ7414EN-T1-E3
MOSFET N-CH 60V 5.6A PPAK 1212-8
SQ7415EN-T1-E3
MOSFET P-CH 60V 3.6A PPAK 1212-8
SQD15N06-42L-GE3
MOSFET N-CH 60V 15A TO252
SQD19P06-60L-GE3
MOSFET P-CH D-S 60V TO252
SQD23N06-31L-GE3
MOSFET N-CH D-S 60V TO252
SQD35N05-26L-GE3
MOSFET N-CH D-S 55V 30A TO252
SQD40N04-10A-GE3
MOSFET N-CH D-S 40V 42A TO252
相关代理商/技术参数
SQ4937EY
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual P-Channel 30 V (D-S) 175 ?°C MOSFET
SQ4937EY-T1-GE3
制造商:Vishay Semiconductors 功能描述:
SQ4940EY
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual N-Channel 40 V (D-S) 175 ?°C MOSFET
SQ4940EY-T1-GE3
制造商:Vishay Semiconductors 功能描述:
SQ4942EY
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual N-Channel 40 V (D-S) 175 ?°C MOSFET
SQ4942EY-T1-GE3
功能描述:MOSFET 40V 8A 4.4W N-Ch Automotive
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQ4946AEY
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual N-Channel 60 V (D-S) 175 ?°C MOSFET
SQ4946AEY-T1-GE3
功能描述:MOSFET 60V 7A 4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
